
AdvanSiC
The AdvanSiC project aims to develop cost-effective High-Voltage Silicon Carbide (SiC) MOSFETs for Medium-Voltage DC (MVDC) grid applications. It focuses on reducing epitaxy costs, designing efficient 3.3 kV SiC MOSFET chips, and optimising HV power module development. The aim is to minimise HV SiC device cost by advancing novel design structures and process optimisation.